Influence of Annealing Temperature on tin Sulfide/ Silicon Photodieode Spectral Responsiveness

Abstract

Thin film of Tin sulfide (SnS) have been deposited on glass substrates by means of thermal evaporation technique at two exeptional annealing temperatures100 and 200 ºC. (XRD) results confirmd that the crystalline dimension extended from (28 to 31) nm as the  temperature of  annealingincreased, and this agrees with (SEM) and (AFM) results. The optical measurements verfide that the energy reduce from about  (2.45 to 2.30)  electron volt  with increasing the  temperature of  annealingdue to Burstein–Moss effect. Al/SnS/n-Si/Al photodetector was fabricated and annealed at exceptional temperatures 100 and 200 ºC in order to find out about the effect of annealing on the performance of the photodetector such as: the forward and reverse bias (I-V), capacity-voltage (C-V) characteristics, and responsivity. The out comes confirmd that the dark current in forward and reverse bias of Al/SnS/ Si/Al photodetector improved with increasing annealing temperature, also the C-V characteristics showed that the built-in potential increased when the  temp. of  annealingincreas and hence,the responsivity increased when the  temperature of  annealingincreased and consequently the responsivity increased.