Efficient Key Data List for Enhancing Symmetric Read – Write Page Access

Authors

  • S. M. Shamsheer Daula
  • G. Ramesh
  • H. Aejaz Aslam
  • G. Amjad Khan

Abstract

In the adoption of NAND devices as a storage medium, the page replacement plays a crucial role within NAND devices as they contribute towards the performance of the system. Numerous algorithms have been proposed over the years to tackle the issues related to NAND memory based flash devices. Issues such as asymmetric read write speeds and erase before write operations.However, the performance can be further enhanced by combining certain features within these algorithms. The main drawback of NAND devices is the update operation wherein a page needs to be updated. The unit of operation to read and write a page is at the page level while the erase operation is done. The buffer is divided into mixed and cold clean list. The algorithm also contains a methodology list to maintain a history of recently evicted pages.The experimental evaluation of the proposed algorithm compared with previous algorithms is provided and discussed with a sub paging mechanism that may further contribute towards an improvement in its performance.

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Published

2020-02-21

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Section

Articles