Performance Characteristics of Tfet over Mosfet, Dg-Mosfet and Finfet

Authors

  • Anjani Devi N
  • Ajaykumar Dharmireddy
  • Sreenivasa Rao Ijjada

Abstract

Bulk MOSFET had been approached the scaling limit, the alternative devices/structures have been explored to meet the huge demands of the low power VLSI circuits. In this context, many Multi gate devices became the choice of the intense subject. Among the possible alternatives, Double Gate (DG) MOSFET, Double gate dynamic threshold (DGDT) CMOS, Tri-gate (FinFET) and Tunnel field effect transistor-TFET, TFET technology is the best choice for the minimum current operations, as it has surprising characteristic of a steep SS usually smaller than 60mv/decade presents alone as a potential device to substitute conventional MOS device beyond 14nm technology. Band to band tunnel (BTBT) switching mechanism is the key difference in between TFET and the conventional MOS technology to overcome the leakage currents. In this paper, the construction, working and the analytical model of TFET and the outperformance of TFET over MOSFET, DGMOSFET and FinFET reported with survey of latest papers.

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Published

2020-01-30

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Section

Articles