Graphene Nanoribbon Fets with Improved ION/IOFF Ratio and Subthreshold Slope
Recent development and heavy market demands for electronic devices suggest need of novel device material with greater efficiency and exceptional characteristics to enhance device performance. Therefore, Carbon, Carbon nanotubes (CNT) and graphene are considered as the most suitable device materials for replacing silicon material in future. Moreover, one of the most significant and fascinating device material is Graphene nanoribbon (GNR) which exhibits several exceptional electrical and mechanical characteristics and high compatibility with lithographic process on graphene sheets makes GNR a suitable candidate to replace silicon. A full quantum transport model is developed and simulated for a double gate GNRFET device using Non Equilibrium Green’s function (NEGF) approach. This paper provides physical modeling of GNRFET and investigates the device characteristics and performance based on ION/IOFF ratio and subthreshold slope parameters for GNRFET with different high-k dielectric gate oxide materials and oxide thickness. The paper reports an ION/IOFF ratio of 2.32x103 and subthreshold slope of 73.74.