Random Discrete Dopant Induced Variability in Gate-All-Around Si-Nanowire FETs

Abstract

This paper shows, random discrete dopant distribution effects on the Si (NW-FETs) are studied using three-dimensional, quantum-correction included density-gradient “atomistic” simulations. Effects of the random dopant fluctuation due to the dopant number and their distribution in the channel are investigated. Using threshold voltage fluctuation (as a parameter) due to dopant number fluctuation, we examine four figures of merit of the nanowire transistor: a) subthreshold slope; b) threshold voltage; c) ON/OFF-switch; and d) DIBL. The predicted variability in threshold voltage may help design of integrated circuits using silicon nanowire transistors.