NBTI Studies in GaAs p-MOSFETs

Abstract

In present paper, the reliability problems of NBTI of GaAs (metal oxide semiconductor field-effect transistor) p-MOSFETs has been focused. For a detail analysis of degradation due to single traps, the nonradiative multiphonon (NMP) model considering four trap states has been used. The charge states of the traps during the stress and the relaxation phases in the device have been predicted by using the TCAD framework. The threshold voltage variation has been studied after the stress and relaxation periods which show both the permanent and the recoverable components of degradation.